[17a-Z17-1~11] 9.4 熱電変換

▲ [17a-Z17-4] High Power Factor in Mg₂Sn_1-xGa_x Epitaxial Thin Films

〇(D)Mariana Lima^1,2、T. Aizawa²、I. Ohkubo²、T. Sakurai¹、T. Mori^1,2 (1.Univ. Tsukuba、2.NIMS)

キーワード：Magnesium Stannide, Thin Films, MBE

In this work, we investigated the effect of incorporating Ga into Mg₂Sn thin film, deposited on Al₂O₃(0001) (sapphire c-plane) substrate using molecular beam epitaxy (MBE). We demonstrated that the incorporation of Ga atoms resulted in superior thermoelectrical properties. The optimal power factor value obtained was S²σ = 1.2 x10^-3 W m^-1 K^-1 at 300K.