[17a-Z27-1~9] 15.4 III-V族窒化物結晶

▼ [17a-Z27-8] Analysis of Stress and Impurity Evolution Related to Growth Sector in Na-flux GaN by Nanobeam X-ray Diffraction

〇(M2)Zhendong WU¹、Takeaki Hamachi¹、Yusuke Hayashi¹、Tetsuya Tohei¹、Masayuki Imanishi²、Yusuke Mori²、Kazushi Sumitani³、Yasuhiko Imai³、Shigeru Kimura³、Akira Sakai¹ (1.Grad. Sch. Eng. Sci., Osaka Univ.、2.Grad. Sch. Eng., Osaka Univ.、3.JASRI)

キーワード：Na-flux GaN, Nanobeam X-ray Diffraction, strain analysis

Nanobeam X-ray diffraction can detect local lattice structure quantitatively with high resolution, which helps us understand the structure evolution in coalescence region of Na-flux GaN grown on multi point seed template. By analyzing the lattice constants distribution, this research has established a model-based method to investigate the oxygen concentration and stress evolution, which is also found to be combined with different growth sectors. Especially, after comparison with the SIMS data, the inconsistent behavior of lattice constants relationship reveals the stress relaxation in micro-facets growth sector, of which the details need more investigation to be explained.