[17p-Z02-1~7] Progress and future prospects in phase change memory materials

[17p-Z02-3] Localized states in phase-change memory and selector materials

〇Tamihiro Gotoh¹, Min Zhu² (1.Gunma Univ., 2.SIMIT-CAS)

Keywords:phase-change memory, selector, density of states

The density of states of chalcogenide materials used in next-generation high-density memory and neuromorphic devices that imitates nerve cells have been experimentally revealed. Understanding the localization states is essential for controlling the phase-change memory and selector resistance transition process. Therefore, the weak absorption of the phase change memory material Ge₂Sb₂Te₅ film and the selector material GeS film was investigated using infrared photothermal deflection spectroscopy. The electron density of states was obtained by analyzing the spectra, and the carrier generation mechanisms were considered.