[17p-Z02-1~7] Progress and future prospects in phase change memory materials

[17p-Z02-4] Anomalous Ag diffusion in phase change materials
– from nanowire formation to γ-ray detection –

〇Toshihiro Nakaoka¹, Tatsuya Watanabe¹, Hyoseong Park¹, Kazuki Nakaya¹, Isao Yoda², Yoshinori Shohmitsu³, Shigeo Kawasaki³ (1.Sophia Univ., 2.Tokyo Tech., 3.JAXA)

Keywords:chalcogenides, nanowire, radiation sensor

The movement of active metal ions through amorphous chalcogenides by electrochemical reactions has attracted much attention as a phenomenon with a wide range of applications such as sensors and memories. We have studied the electrochemical reaction between Ge-(Sb)-Te thin films, a typical phase change material, and Ag, the active metal of CBRAM. In this talk, we will show nanowire growth based on electrochemical reactions and reversible resistance change to γ-rays toward radiation-resistant memory and radiation sensors.