Symposium (Oral)

[17p-Z02-1~7] Progress and future prospects in phase change memory materials

Wed. Mar 17, 2021 1:30 PM - 4:45 PM Z02 (Z02)

Tamihiro Gotoh(Gunma Univ.), Norimitsu Yoshida(Gifu Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[17p-Z02-1] [Young Scientist Presentation Award Speech] Development of inverse resistance change phase change material for non-volatile memory

〇Shogo Hatayama¹, Yuji Sutou¹ (1.Tohoku Univ.)

1:45 PM - 2:00 PM

[17p-Z02-2] β→α polymorphic transformation in MnTe films via atomic-displacement

〇Shunsuke Mori¹, Daisuke Ando¹, Yuji Sutou¹ (1.Tohoku Univ.)

2:00 PM - 2:30 PM

[17p-Z02-3] Localized states in phase-change memory and selector materials

〇Tamihiro Gotoh¹, Min Zhu² (1.Gunma Univ., 2.SIMIT-CAS)

2:30 PM - 3:00 PM

[17p-Z02-4] Anomalous Ag diffusion in phase change materials
– from nanowire formation to γ-ray detection –

〇Toshihiro Nakaoka¹, Tatsuya Watanabe¹, Hyoseong Park¹, Kazuki Nakaya¹, Isao Yoda², Yoshinori Shohmitsu³, Shigeo Kawasaki³ (1.Sophia Univ., 2.Tokyo Tech., 3.JAXA)

3:15 PM - 3:45 PM

[17p-Z02-5] Electrical and Optical Properties in GST Phase Change Materials: On the Matters of Debate

〇Koichi Shimakawa¹ (1.Gifu Univ.)

3:45 PM - 4:15 PM

[17p-Z02-6] Development of chalcogenide-based phase-change materials and future prospects

〇Yuta Saito¹ (1.AIST D-Tech)

4:15 PM - 4:45 PM

[17p-Z02-7] Development of phase change materials enabling low-power and fast operation PCRAM

〇Yuji Sutou¹, Shogo Hatayama¹, Shunsuke Mori¹, Yi Shuang¹ (1.Tohoku Univ.)

Sessions

Symposium » Progress and future prospects in phase change memory materials

[17p-Z02-1~7] Progress and future prospects in phase change memory materials

[17p-Z02-1] [Young Scientist Presentation Award Speech] Development of inverse resistance change phase change material for non-volatile memory

[17p-Z02-2] β→α polymorphic transformation in MnTe films via atomic-displacement

[17p-Z02-3] Localized states in phase-change memory and selector materials

[17p-Z02-4] Anomalous Ag diffusion in phase change materials
– from nanowire formation to γ-ray detection –

[17p-Z02-5] Electrical and Optical Properties in GST Phase Change Materials: On the Matters of Debate

[17p-Z02-6] Development of chalcogenide-based phase-change materials and future prospects

[17p-Z02-7] Development of phase change materials enabling low-power and fast operation PCRAM

Authenticate

Sessions

Symposium » Progress and future prospects in phase change memory materials

[17p-Z02-1~7] Progress and future prospects in phase change memory materials

[17p-Z02-1] [Young Scientist Presentation Award Speech] Development of inverse resistance change phase change material for non-volatile memory

[17p-Z02-2] β→α polymorphic transformation in MnTe films via atomic-displacement

[17p-Z02-3] Localized states in phase-change memory and selector materials

[17p-Z02-4] Anomalous Ag diffusion in phase change materials– from nanowire formation to γ-ray detection –

[17p-Z02-5] Electrical and Optical Properties in GST Phase Change Materials: On the Matters of Debate

[17p-Z02-6] Development of chalcogenide-based phase-change materials and future prospects

[17p-Z02-7] Development of phase change materials enabling low-power and fast operation PCRAM

Authenticate

[17p-Z02-4] Anomalous Ag diffusion in phase change materials
– from nanowire formation to γ-ray detection –