[17p-Z26-1~15] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[17p-Z26-6] [Young Scientist Presentation Award Speech] Demonstration of Surrounding Gate Vertical-Channel FET with Gate Length of 40 nm Using BEOL Process Compatible In-Al-Zn Oxide Channel

〇Hirokazu Fujiwara¹, Yuta Sato¹, Nobuyoshi Saito¹, Tomomasa Ueda¹, Keiji Ikeda¹ (1.Kioxia Corp.)

Keywords:oxide semiconductor, vertical field effect transistor

We fabricated a surrounding gate vertical-channel FET with an In-Al-Zn-O channel which shows both high mobility and high thermal stability, and measured transfer characteristics and reliability of the device. This device showed excellent cut off characteristics even after annealing at 420 ^oC. In addition, it also indicated high reliability and achieved endurance over 10¹¹ cycles. These results demonstrate that a surrounding gate short-channel vertical FET with an oxide-semiconductor channel has operated successfully, for the first time.