[17p-Z33-1~8] 15.5 IV族結晶，IV-IV族混晶

▲ [17p-Z33-2] Realization and Characterization of Vertical Ge n⁺/p Structure Towards Nanowire Transistor Applications

〇(M2)Rahmat Hadi Saputro^1,2、Ryo Matsumura¹、Naoki Fukata^1,2 (1.NIMS、2.Univ. of Tsukuba)

キーワード：Germanium, pn-junction, MBE

The excellent transport properties of Ge make it a prime candidate for next-generation CMOS-compatible electronic devices. A crucial problem in making n-MOSFET is the difficulties to form high quality n⁺ Ge for the source/drain. In this research, we are focusing on the study of vertically structured Ge n⁺/p junction fabricated by molecular beam epitaxy (MBE). Realization of vertical Ge p-n junction is promising for the development of nanowire transistor. Here, the effect of junction scaling to the performance of n⁺/p diodes are investigated by a conventional current-voltage measurement.