[18a-Z14-1~11] 7.1 X線技術

▲ [18a-Z14-2] Cleaning of tin layer on EUV multilayer mirrors by the EUV induced hydrogen plasma

〇Nozomi Tanaka¹、Baojun Zhu¹、Chang Liu¹、Katsunobu Nishihara¹、Shinsuke Fujioka¹、Kyung Sik Kang²、Youngduk Suh²、Jeong-Gil Kim²、Ken Ozawa³、Minoru Kubo³ (1.ILE Osaka Univ.、2.Samsung MRD Center、3.Samsung R&D Inst.)

キーワード：EUV source, Hydrogen plasma, Sn contamination cleaning

It has been known that the excited states of hydrogen atoms, which are also called as “hydrogen radicals” play an important role in the cleaning of this Sn contamination layer on the multilayer mirrors in the EUV sources. We have developed a testbed consists with a Xe EUV source and a hydrogen gas cell to study the production process of the EUV induced radicals and cleaning effects. The cleaning results of the Sn contamination layer in the EUV induced hydrogen plasma will be presented.