[18a-Z15-1~10] 13.7 Compound and power electron devices and process technology

[18a-Z15-10] Electron traps formed by oxygen ion implantation in n-type GaN

〇(M1)Yuichi Shibata¹, Masahiro Horita^1,2, Ryo Tanaka³, Shinya Takashima³, Katsunori Ueno³, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Fuji Electric)

Keywords:GaN, ion implantation, DLTS