[18a-Z31-1~9] 17.3 Layered materials

[18a-Z31-4] Crystal phase control of In_xSe_y by metal organic chemical vapor deposition

〇Yukihiro Endo¹, Yoshiaki Sekine¹, Yoshitaka Taniyasu¹ (1.NTT Basic Res. Labs.)

Keywords:III-VI semiconductor, metal organic chemical vapor deposition

III-VI semiconductors such as In_xSe_y have band gap ranging from infrared to visible light and high carrier mobility which make it a promising candidate for optoelectronic devices. On the other hand, In_xSe_y has various crystal phases, and the growth technique for controlling the crystal phases is required. In this study, we performed the growth of In_xSe_y by using metal organic chemical vapor deposition. It showed that the crystal phases (β-In₂Se₃, γ-In₂Se₃ and InSe) are able to be controlled by In/Se supply ratio.