11:15 AM - 11:30 AM
[18a-Z33-9] Schottky barrier diode using ultra-wide bandgap amorphous oxide semiconductor, a-Ga-O
Keywords:amorphous oxide semiconductor
Oral presentation
21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
Thu. Mar 18, 2021 9:00 AM - 11:30 AM Z33 (Z33)
Yamada Naoomi(Chubu Univ.), Magari Yusaku(Simane Univ.)
11:15 AM - 11:30 AM
Keywords:amorphous oxide semiconductor