[18p-Z24-1~14] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[18p-Z24-6] Electrical Characteristics of Atmospheric Pressure Micro-Thermal-Plasma-Jet Crystallized P-type Germanium Film

〇Yusuke Akatsuka¹, Takuma Sato¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

Keywords:Germanium, Thin film crystallization

We investigated the electrical properties of p-type Germanium (Ge) films crystallized by micro-thermal plasma-jet. On changing scanning speeds (v = 200 to 2000 mm/s) and distances between the plasma source and the substrates (d = 2.5 to 3.5 mm), we found a crystal growth region similar to high speed lateral crystallization (HSLC) observed in amorphous silicon films. The crystallized HSLC-Ge film showed a hole mobility of 374 cm²/Vs with a hole concentration of 2.4 × 10¹⁷ cm^-3. This study suggested the importance of tuning the d which would expands the HSLC process windows. To obtain high mobility Ge thin films, we investigated the effect of d on a-Ge film crystallization.