[19a-P04-1~9] 8 Plasma Electronics(Poster)

[19a-P04-9] Development of a wafer surface charge suppression method by low frequency voltage for atomic level profile control in plasma etching

〇Ryosuke Ochiai¹, Mori Isao¹, Tanaka Motohiro¹ (1.Hitachi High-Tech)

Keywords:plasma etching equipment, atomic level process, wafer surface charge cancel

To achieve atomic-level profile control that is recently required for theproduction of semiconductor devices, we investigated a novel suppression method of ion sputtering damage on a pattern surface caused by wafer surface charging. In this method, a current to remove wafer surface charge is generated by superimposing low-frequency voltage overradio-frequency voltage for wafer bias.This method does not have an impact on a sheath. We confirmed in a demonstration that this method suppressed the atomic-level damageof a sample.