[19a-Z24-1~10] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[19a-Z24-8] Boron Doping Method using BCl3 gas for Silicon Minimal CVD Film Formation

Atsuhiro Motomiya¹, Mana Otani¹, 〇Hitoshi Habuka¹, Shin-ichi Ikeda^2,3, Yuuki Ishida^2,3, Shiro Hara^2,3 (1.Yokohama National Univ., 2.MINIMAL, 3.AIST)

Keywords:Minimal Fab, Silicon CVD, Boron trichloride

In order to doping boron in silicon CVD film for the Minimal Fab., the boron trichloride gas was used.
The boron trchloride is sutble for the Minima Fab, because of safety and the other reasons.