The 68th JSAP Spring Meeting 2021

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13 Semiconductors » 13.7 Compound and power electron devices and process technology

[19a-Z25-1~8] 13.7 Compound and power electron devices and process technology

Fri. Mar 19, 2021 9:30 AM - 11:45 AM Z25 (Z25)

Kenji Shiojima(Univ. of Fukui)

10:00 AM - 10:15 AM

[19a-Z25-3] Substrate dependence of current-voltage characteristics in AlGaN/GaN Hall devices

〇Daiki Tanaka1, Akio Wakejima3, Yuji Ando1, Jun Suda1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Nagoya Inst. of Tech.)

Keywords:semiconductor, Gallium nitride, HEMT