Operand analysis of local piezoelectric lattice deformation in AlGaN/GaN HEMT devices by synchrotron radiation nanobeam X-ray diffraction

Haruna Shiomi; Akihiro Shimada; Tetsuya Tohei; Yusuke Hayashi; Shota Kaneki; Tamotsu Hashizume; Yasuhiko Imai; Kazushi Sumitani; Shigeru Kimura; Akira Sakai

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[19a-Z25-1~8] 13.7 Compound and power electron devices and process technology

Fri. Mar 19, 2021 9:30 AM - 11:45 AM Z25 (Z25)

Kenji Shiojima(Univ. of Fukui)

10:15 AM - 10:30 AM

[19a-Z25-4] Operand analysis of local piezoelectric lattice deformation in AlGaN/GaN HEMT devices by synchrotron radiation nanobeam X-ray diffraction

〇Haruna Shiomi¹, Akihiro Shimada¹, Tetsuya Tohei¹, Yusuke Hayashi¹, Shota Kaneki², Tamotsu Hashizume², Yasuhiko Imai³, Kazushi Sumitani³, Shigeru Kimura³, Akira Sakai¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.RCIQE, Hokkaido Univ., 3.JASRI)

Keywords:nanobeam X-ray diffraction, piezoelectric effect, nitride semiconductor