[19a-Z25-1~8] 13.7 Compound and power electron devices and process technology

[19a-Z25-5] Lowered on-resistance in p-n junction diodes with highly Ge-doped GaN substrate

〇Hiroshi Ohta¹, Naomi Asai¹, Kazuhiro Mochizuki¹, Takehiro Yoshida², Fumimasa Horikiri², Yoshinobu Narita², Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)

Keywords:p-n junction diode, Ge-doped GaN substrate, Lowered on-resistance

We evaluated the on-resistance reduction effect of the p-n junction diode using a high-concentration Ge-doped GaN substrate. As a result, the on-resistance was significantly reduced in the Ge-doped (6×10¹⁸ cm^-3) substrate as compared with the mormal Si-doped (2×10¹⁸ cm^-3) substrate. A similar phenomenon was observed with the p-n diode on a high-concentration O-doped OVPE substrate, confirming the usefulness of the high-concentration doped substrate.