[19a-Z29-1~9] 15.7 Crystal characterization, impurities and crystal defects

[19a-Z29-6] Influence for Power Semiconductor Device Properties of Carbon Related Crystal Defect
in Silicon Wafer

〇Shun Sasaki¹, Noritomo Mitsugi¹, Shuichi Samata¹, Masanori Tsukuda², Ichiro Omura² (1.SUMCO Corporation, 2.Kyushu Inst)

Keywords:silicon, power semiconductor device, irradiation defect

Carbon impurity in silicon wafer forms carbon related crystal defects such as C_iO_i and C_iC_s, by high energy particle beams and annealing process in semiconductor device fabrication process. These carbon related crystal defects affect device properties of power semiconductor devices. However their thermal behavior and the defect species which strongly contributes the device properties are unclear. To reveal these issues, we fabricated PiN diodes by employing MCZ silicon wafer which is utilized for power semiconductor devices and performed electron beam irradiation and annealing, to the PiN diodes. To investigate the thermal behavior and the contribution for device properties of the defects in i layer of PiN diodes, we evaluated recombination carrier lifetime, forward voltage, and traps by Open Circuit Voltage Decay, I-V, and Deep Level Transient Spectroscopy.