Poster presentation

[16p-P03-1~1] 15.7 Crystal characterization, impurities and crystal defects

Tue. Mar 16, 2021 1:00 PM - 1:50 PM P03 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

1:00 PM - 1:50 PM

[16p-P03-1] Defect Analyses Using TEM of a-In₂O₃ Grown by Mist CVD on a-Al₂O₃Substrate

〇Yuka Hayakawa¹, Soichiro Ohno¹, Tomohiro Yamaguchi¹, Takanori Kiguchi², Subaru Takahashi¹, Yokoo Hirokazu¹, Takeyoshi Onuma¹, Tohru Honda¹ (1.Kogakuin Univ., 2.Tohoku Univ.)

Oral presentation

[19a-Z29-1~9] 15.7 Crystal characterization, impurities and crystal defects

Fri. Mar 19, 2021 9:00 AM - 11:30 AM Z29 (Z29)

Susumu Maeda(GWJ), Haruo Sudo(GlobalWafers)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:00 AM - 9:15 AM

[19a-Z29-1] Characteristic of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-Stacked CMOS Image Sensors (I)
-Reduction of SiO₂/Si Interface State using Hydrocarbon-Molecular-Ion-Implanted Wafers-

〇Ryosuke Okuyama¹, Takeshi Kadono¹, Ayumi Masada¹, Akihiro Suzuki¹, Koji Kobayashi¹, Satoshi Shigematsu¹, Ryo Hirose¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO)

9:15 AM - 9:30 AM

△ [19a-Z29-2] Characteristics of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-stacked CMOS Image Sensors (II)
– In Situ TEM Observation of Thermal Dissolution Behavior of CH₄N Multielement-Molecular-Ion-Implantation-Induced Defects –

〇Akihiro Suzuki¹, Takeshi Kadono¹, Ryo Hirose¹, Koji Kobayashi¹, Ayumi Masada¹, Ryosuke Okuyama¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO)

9:30 AM - 9:45 AM

△ [19a-Z29-3] Characteristic of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-Stacked CMOS Image Sensors (Ⅲ)
-Gettering Capability in Hybrid Molecular Ion Implanted Range-

〇Ryo Hirose¹, Takeshi Kadono¹, Ayumi Masada¹, Ryosuke Okuyama¹, Koji Kobayashi¹, Akihiro Suzuki¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO)

9:45 AM - 10:00 AM

[19a-Z29-4] Characteristic of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-Stacked CMOS Image Sensors (IV)
-Dark Current Reduction Mechanism of Molecular Ion Implanted Double Epitaxial Wafers Using Dark Current Spectroscopy-

〇Ayumi Masada¹, Takeshi Kadono¹, Ryosuke Okuyama¹, Ryo Hirose¹, Koji Kobayashi¹, Akihiro Suzuki¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO)

10:00 AM - 10:15 AM

[19a-Z29-5] Thermal behavior of hydrogen in silicon substrate introduced from SiN film

〇Katsuto Tanahashi¹, Katsuhiko Shirasawa¹, Shunsuke Heito², Hidetaka Takato¹ (1.AIST, 2.KYOCERA)

10:30 AM - 10:45 AM

[19a-Z29-6] Influence for Power Semiconductor Device Properties of Carbon Related Crystal Defect
in Silicon Wafer

〇Shun Sasaki¹, Noritomo Mitsugi¹, Shuichi Samata¹, Masanori Tsukuda², Ichiro Omura² (1.SUMCO Corporation, 2.Kyushu Inst)

10:45 AM - 11:00 AM

[19a-Z29-7] Quality of silicon substrate and point defects (5) CiO2i and NN, CO, NO, OO ring

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Pref. Univ.)

11:00 AM - 11:15 AM

[19a-Z29-8] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (18) Double peaks of nitrogen absorption

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Pref. Univ.)

11:15 AM - 11:30 AM

[19a-Z29-9] Measurement of carbon concentration in silicon crystal
(XXII) Restart of the revision of the SEMI Standard

〇Naohisa Inoue¹, Shuichi Okuda¹, Shuichi Kawamata¹ (1.Osaka Pref. Univ.)

Oral presentation

[19p-Z29-1~13] 15.7 Crystal characterization, impurities and crystal defects

Fri. Mar 19, 2021 1:00 PM - 4:45 PM Z29 (Z29)

Kazuhisa Torigoe(SUMCO), Takuo Sasaki(QST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:00 PM - 1:15 PM

[19p-Z29-1] Optical Characterization of Carrier Recombination Process in Intermediate Type GaPN Alloy: Comparison of Nitrogen Content Between 1.4% and 3.2%

〇Hiroki Iwai¹, Sanjida Ferdous¹, Norihiko Kamata¹, Shuhei Yagi¹, Hiroyuki Yaguchi¹ (1.Saitama Univ.)

1:15 PM - 1:30 PM

[19p-Z29-2] Detection of Non-Radiative Recombination Levels in InGaN-LED Under Operation By Irradiating Below-Gap Excitation Light

〇(M1)Natsuki Chiyoda¹, Norihiko Kamata¹, Hiroyuki Yguchi¹ (1.Saitama Univ.)

1:30 PM - 1:45 PM

[19p-Z29-3] Free-to-bound emission from C_iO_i defects in electron-irradiated Si

〇Michio Tajima^1,2, Shota Asahara¹, Yuta Satake¹, Atsushi Ogura¹ (1.Meiji Univ., 2.NPERC-J)

1:45 PM - 2:00 PM

[19p-Z29-4] Mechanism for segregation of arsenic dopants at grain boundaries in silicon

〇Yutaka Ohno¹, Yasuo Shimizu^1,5, Jie Ren¹, Tatsuya Yokoi², Koji Inoue¹, Yasuyoshi Nagai¹, Hideto Yoshida³, Kentaro Kutsukake⁴, Kozo Fujiwara¹, Atsutomo Nakamura², Katsushi Matsunaga² (1.IMR, Tohoku Univ., 2.GSE, Nagoya Univ., 3.ISIR, Osaka Univ., 4.RIKEN, 5.NIMS)

2:15 PM - 2:30 PM

△ [19p-Z29-5] Analysis of local strain fields around individual threading dislocations in HVPE-GaN bulk crystals by using nanobeam X-Ray diffraction

〇Takeaki Hamachi¹, Tetsuya Tohei¹, Yusuke Hayashi¹, Shigeyoshi Usami², Masayuki Imanishi², Yusuke Mori², Kazushi Sumitani³, Yasuhiko Imai³, Shigeru Kimura³, Akira Sakai¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.Grad. Sch. of Eng., Osaka Univ., 3.JASRI)

2:30 PM - 2:45 PM

[19p-Z29-6] Evaluation of residual strain in GaAs films grown on Porous Si substrates with different porosity

〇Kenta Kobayashi¹ (1.Miyazaki Univ.)

2:45 PM - 3:00 PM

△ [19p-Z29-7] Effect of Copper Doping on the Crystal Structure of MAPbBr₃

〇Kodai Nakao¹, Amr Elattar¹, Ryuji Mishima¹, Hirotaka Inoue¹, Hiroo Suzuki¹, Takeshi Nishikawa¹, Yasuhiko Hayashi¹ (1.Okayama Univ.)

3:00 PM - 3:15 PM

[19p-Z29-8] Effects of X-irradiation and Thermal Annealing on Fe-doped GaN

〇Kaoru Akase¹, Yuya Hamasaki¹, Ayako Kai¹ (1.Yamaguchi Univ.,Graduate School of Sciences and Technology for Innovation)

3:30 PM - 3:45 PM

△ [19p-Z29-9] Numerical analysis on crystallization-interface-shape deformation of 200 mm (8 inch) FZ silicon during crystal growth process

〇Kendai Miyata¹, Xue-Feng Han², Satoshi Nakano², Xin Liu², Koichi Kakimoto^1,2 (1.Kyushu Univ., 2.RIAM, Kyushu Univ.)

3:45 PM - 4:00 PM

[19p-Z29-10] Oxygen transfer in CZ-Si process with magnetic fields

〇Koichi Kakimoto¹, LIU Xin¹, Nakano Satoshi¹ (1.RIAM, Kyushu Univ.)

4:00 PM - 4:15 PM

△ [19p-Z29-11] Large-scale atomic level calculation of vacancy clusters in Si crystal using ANN potential (2)

〇(M1)Takuto Ushiro¹, Tatsuya Yokoi², Yusuke Noda³, Eiji Kamiyama⁴, Masato Ohbitsu¹, Hiroki Nagakura¹, Koji Sueoka⁴ (1.Graduate School of Engineering, Okayama Pref. Univ., 2.Graduate School of Engineering, Nagoya Univ., 3.Kanazawa Gakuin Univ., 4.Okayama Pref. Univ.)

4:15 PM - 4:30 PM

△ [19p-Z29-12] Calculation of interstitial Si clusters in Si crystal using ANN potential (2)

〇(M1)Masato Ohbitsu¹, Tatsuya Yokoi², Yusuke Noda³, Eiji Kamiyama⁴, Takuto Ushiro¹, Hiroki Nagakura¹, Koji Sueoka⁴ (1.Graduate School of Engineering, Okayama Pref. Univ., 2.Graduate School of Engineering, Nagoya Univ., 3.Kanazawa Gakuin Univ., 4.Okayama Pref. Univ.)

4:30 PM - 4:45 PM

[19p-Z29-13] Structural consideration of self-interstitial-type defects in as-grown Si crystals

〇Eiji Kamiyama^1,2, Koji Sueoka² (1.GlobalWafers Japan Co., Ltd., 2.Okayama Pref. Univ.)

Sessions

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[16p-P03-1~1] 15.7 Crystal characterization, impurities and crystal defects

[16p-P03-1] Defect Analyses Using TEM of a-In₂O₃ Grown by Mist CVD on a-Al₂O₃Substrate

[19a-Z29-1~9] 15.7 Crystal characterization, impurities and crystal defects

[19a-Z29-1] Characteristic of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-Stacked CMOS Image Sensors (I)
-Reduction of SiO₂/Si Interface State using Hydrocarbon-Molecular-Ion-Implanted Wafers-

△ [19a-Z29-2] Characteristics of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-stacked CMOS Image Sensors (II)
– In Situ TEM Observation of Thermal Dissolution Behavior of CH₄N Multielement-Molecular-Ion-Implantation-Induced Defects –

△ [19a-Z29-3] Characteristic of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-Stacked CMOS Image Sensors (Ⅲ)
-Gettering Capability in Hybrid Molecular Ion Implanted Range-

[19a-Z29-4] Characteristic of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-Stacked CMOS Image Sensors (IV)
-Dark Current Reduction Mechanism of Molecular Ion Implanted Double Epitaxial Wafers Using Dark Current Spectroscopy-

[19a-Z29-5] Thermal behavior of hydrogen in silicon substrate introduced from SiN film

[19a-Z29-6] Influence for Power Semiconductor Device Properties of Carbon Related Crystal Defect
in Silicon Wafer

[19a-Z29-7] Quality of silicon substrate and point defects (5) CiO2i and NN, CO, NO, OO ring

[19a-Z29-8] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (18) Double peaks of nitrogen absorption

[19a-Z29-9] Measurement of carbon concentration in silicon crystal
(XXII) Restart of the revision of the SEMI Standard

[19p-Z29-1~13] 15.7 Crystal characterization, impurities and crystal defects

[19p-Z29-1] Optical Characterization of Carrier Recombination Process in Intermediate Type GaPN Alloy: Comparison of Nitrogen Content Between 1.4% and 3.2%

[19p-Z29-2] Detection of Non-Radiative Recombination Levels in InGaN-LED Under Operation By Irradiating Below-Gap Excitation Light

[19p-Z29-3] Free-to-bound emission from C_iO_i defects in electron-irradiated Si

[19p-Z29-4] Mechanism for segregation of arsenic dopants at grain boundaries in silicon

△ [19p-Z29-5] Analysis of local strain fields around individual threading dislocations in HVPE-GaN bulk crystals by using nanobeam X-Ray diffraction

[19p-Z29-6] Evaluation of residual strain in GaAs films grown on Porous Si substrates with different porosity

△ [19p-Z29-7] Effect of Copper Doping on the Crystal Structure of MAPbBr₃

[19p-Z29-8] Effects of X-irradiation and Thermal Annealing on Fe-doped GaN

△ [19p-Z29-9] Numerical analysis on crystallization-interface-shape deformation of 200 mm (8 inch) FZ silicon during crystal growth process

[19p-Z29-10] Oxygen transfer in CZ-Si process with magnetic fields

△ [19p-Z29-11] Large-scale atomic level calculation of vacancy clusters in Si crystal using ANN potential (2)

△ [19p-Z29-12] Calculation of interstitial Si clusters in Si crystal using ANN potential (2)

[19p-Z29-13] Structural consideration of self-interstitial-type defects in as-grown Si crystals

Authenticate

Sessions

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[16p-P03-1~1] 15.7 Crystal characterization, impurities and crystal defects

[19a-Z29-1~9] 15.7 Crystal characterization, impurities and crystal defects

△ [19a-Z29-2] Characteristics of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-stacked CMOS Image Sensors (II)– In Situ TEM Observation of Thermal Dissolution Behavior of CH4N Multielement-Molecular-Ion-Implantation-Induced Defects –

△ [19a-Z29-3] Characteristic of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-Stacked CMOS Image Sensors (Ⅲ)-Gettering Capability in Hybrid Molecular Ion Implanted Range-

[19p-Z29-1~13] 15.7 Crystal characterization, impurities and crystal defects

△ [19p-Z29-5] Analysis of local strain fields around individual threading dislocations in HVPE-GaN bulk crystals by using nanobeam X-Ray diffraction

△ [19p-Z29-7] Effect of Copper Doping on the Crystal Structure of MAPbBr3

△ [19p-Z29-9] Numerical analysis on crystallization-interface-shape deformation of 200 mm (8 inch) FZ silicon during crystal growth process

△ [19p-Z29-11] Large-scale atomic level calculation of vacancy clusters in Si crystal using ANN potential (2)

△ [19p-Z29-12] Calculation of interstitial Si clusters in Si crystal using ANN potential (2)

Authenticate

△ [19a-Z29-2] Characteristics of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-stacked CMOS Image Sensors (II)
– In Situ TEM Observation of Thermal Dissolution Behavior of CH₄N Multielement-Molecular-Ion-Implantation-Induced Defects –

△ [19a-Z29-3] Characteristic of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-Stacked CMOS Image Sensors (Ⅲ)
-Gettering Capability in Hybrid Molecular Ion Implanted Range-

△ [19p-Z29-7] Effect of Copper Doping on the Crystal Structure of MAPbBr₃