[19a-Z29-1~9] 15.7 Crystal characterization, impurities and crystal defects

[19a-Z29-8] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (18) Double peaks of nitrogen absorption

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Pref. Univ.)

Keywords:silicon crystal, nitrogen, infrared absorption

The shape of infrared absorption peaks by the local vibration mode of light element impurity is Lorantzian usually. However, it was revealed that the 855 cm-1 band from ONO shallow thermal donor, the 689 cm-1 band by VVNN introduced by electron irradiation and annealing are rounded at the top, and the 551cm-1 band from Ni is extended on the higher wavenumber side. We have recently revealed that the latter is composed of the bands at 551 and 552 cm-1.Here, it is examined in detail. The 551 cm-1 IT spectrum of various annealing temperatures is shown. There is an additional band at 552 cm-1 and the relative strength changes with the annealing temperature. In addition, there is another pair of bands at 556 and 557 cm-1. The latter is strong at the middle temperature and the former is strong at the low and high temperature range, showing the complementary behavior. This shows the transformation between the former and latter configurations. The 689 cm-1 band accompanies the bands at 684, 677 and 674 cm-1.