[19p-Z29-1~13] 15.7 Crystal characterization, impurities and crystal defects

[19p-Z29-10] Oxygen transfer in CZ-Si process with magnetic fields

〇Koichi Kakimoto¹, LIU Xin¹, Nakano Satoshi¹ (1.RIAM, Kyushu Univ.)

Keywords:semiconductor

This paper reports mechanism of oxygen transfer in silicon melt of CZ-Si with magnetic fields by using a 2D-3D coupling method. We studied the mechanism in silicon melt with transverse (TMCZ) and Cusp-shaped magnetic fields (CMCZ). Thin boundary layer of oxygen is formed near a solid-liquid interface in TMCZ while the layer is not formed in CMCZ.