9:30 AM - 9:45 AM
[19a-Z33-3] Study on deep level in Sn-doped α-Ga2O3 grown on m-face sapphire by using cathodoluminescence method Ⅱ
Keywords:gallium oxide, deep level, cathodoluminescence
α-Ga2O3 is a new wide-band-gap semiconductor which is expected to be applied to power devices. In the previous meeting, we indicated that Sn-doped m-face α-Ga2O3 had two band emission bands to use the cathodoluminescence method. They are a blue luminescence band (BL) at 2.8 eV and an ultraviolet luminescence band (UVL) at 3.7 eV. The origin of UVL is suggested to be the exciton (STE) by self-trapped hole (STH) from the relationship between Sn concentration and Debye length. In this meeting, we report the inferred origin of BL and UVL from the temperature dependence of CL spectra and the change of accretion voltage.