[19p-Z07-1~9] 3.7 Laser processing

[19p-Z07-2] Formation of silicon ultra-shallow high-concentration doping layer by laser doping method using a coating film

〇Takayuki Kurashige¹, Akira Mizutani^1,2, Daisuke Nakamura¹, Hiroshi Ikenoue^1,2, Keita Katayama¹ (1.ISEE, Kyushu Univ, 2.Dept. of Gigaphoton Next GLP, Kyushu Univ.)

Keywords:laser doping

In this study, a light source with a wavelength of 266 nm, which has an absorption length of 4.7 nm for Si, was used for doping the surface layer of 5 nm or less. We have reported the achievement of instantaneous high-concentration uniform doping through solid-phase-liquid phase transition by applying an impurity solution such as a phosphoric acid solution or alumina sol to c-Si and irradiating it with an excimer laser. In this talk, we report an attempt to form an ultra-shallow high-concentration doping layer by applying an impurity solution-coated laser doping to single crystal silicon.