Hiromu Nagai

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Speaker, Author, Co-Author

Tue. Sep 20, 2022 1:00 PM - 7:00 PM B203 (B203)

Oral presentation
| 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-B203-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

5:45 PM - 6:00 PM

[20p-B203-18] Characteristics of Ga₂O₃/3C-SiC direct bonding for improving heat dissipation of power devices

〇(M2)Hiromu Nagai¹, Keisuke Kawamura², Hiroki Uratani², Yoshiki Sakaida², Naoteru Shigekawa^1,3, Jianbo Liang^1,3 (1.Osaka City Univ., 2.Air Water Inc., 3.Osaka Metropolitan Univ.)