16:00 〜 16:15 ▼ [22p-A307-10] Investigation of the etching process for Pt gate electrode on the ferroelectric property of 5 nm thick nondoped HfO2 thin films 〇(DC)JoongWon Shin1、Masakazu Tanuma1、Shun-ichiro Ohmi1 (1.Tokyo Inst. of Technol.)