1:30 PM - 1:45 PM

▼ [22p-A307-1] A Vertical Channel Ferroelectric/Anti-Ferroelectric FET with ALD InOx

〇Zhuo Li¹, Jixuan Wu¹, Xiaoran Mei¹, Xingyu Huang¹, Takuya Saraya¹, Toshiro Hiramoto¹, Takanori Takahashi², Mutsunori Uenuma², Yukiharu Uraoka², Masaharu Kobayashi^1,3 (1.IIS., Univ. of Tokyo, 2.NAIST, 3.d.lab, Univ. of Tokyo)

1:45 PM - 2:00 PM

[22p-A307-2] Field-Induced Polar-Axis Alignment for 3D High-Density Memory

〇Zhuo Li¹, Jixuan Wu¹, Xiaoran Mei¹, Xingyu Huang¹, Takuya Saraya¹, Toshiro Hiramoto¹, Takanori Takahashi², Mutsunori Uenuma², Yukiharu Uraoka², Masaharu Kobayashi^1,3 (1.IIS., Univ. of Tokyo, 2.NAIST, 3.d.lab, Univ. of Tokyo)

2:00 PM - 2:15 PM

[22p-A307-3] Structural analysis of ferroelectric Hf_xZr_1−xO₂/TiN fabricated using atomic layer deposition with different oxidant

〇(P)Takashi Onaya^1,2,3, Toshihide Nabatame², Takahiro Nagata², Shigenori Ueda², Yong Chan Jung⁴, Heber Hernandez-Arriaga⁴, Jaidah Mohan⁴, Jiyoung Kim⁴, Chang-Yong Nam⁵, Esther H. R. Tsai⁵, Koji Kita⁶, Shinji Migita¹, Hiroyuki Ota¹, Yukinori Morita¹ (1.AIST, 2.NIMS, 3.JSPS Research Fellow PD, 4.UT Dallas, 5.Brookhaven Nat. Lab., 6.Univ. Tokyo)

2:15 PM - 2:30 PM

[22p-A307-4] Mechanism of Ferroelectric Phase Assist in HfO₂-ZrO₂ Laminate Structures

〇Shinji Migita¹, Yukinori Morita¹, Shutaro Asanuma¹, Hiroyuki Ota¹, Yuta Saito¹ (1.AIST)

2:30 PM - 2:45 PM

[22p-A307-5] Origin of negative capacitance in ferroelectric capacitor system

〇Akira Toriumi¹, Shinji Migita² (1.Free Engineer, 2.AIST)

2:45 PM - 3:00 PM

[22p-A307-6] S-factor lowering derived from negative capacitance effect

〇Akira Toriumi¹, Shinji Migita² (1.Free Engineer, 2.AIST)

3:00 PM - 3:15 PM

[22p-A307-7] Influence of sputtering pressure on AlScN films

〇(B)Yukimura Tokita¹, Sung-Lin Tsai¹, Takuya Hoshii¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui², Kuniyuki Kakushima¹ (1.Tokyo Tech Eng., 2.Tokyo Tech IIR)

3:30 PM - 3:45 PM

[22p-A307-8] Investigation of the decrease of interfacial layer thickness for the ferroelectric nondoped HfO₂ formation and device characteristics of MFSFET

〇Masakazu Tanuma¹, Joong-Won Shin¹, Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Technology)

3:45 PM - 4:00 PM

[22p-A307-9] Investigation of ferroelectric HfN_x formation and MFSFET characteristics

〇Akinori Ide¹, Masakazu Tanuma¹, Ihara Akio¹, Ohmi Shun-ichiro¹ (1.Tokyo Inst. of Technology)

4:00 PM - 4:15 PM

▼ [22p-A307-10] Investigation of the etching process for Pt gate electrode on the ferroelectric property of 5 nm thick nondoped HfO₂ thin films

〇(DC)JoongWon Shin¹, Masakazu Tanuma¹, Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Technol.)

4:15 PM - 4:30 PM

▼ [22p-A307-11] Demonstration of Ferroelectricity of 10 nm YHO7 Thin Film through Piezoelectric Force Microscopy

〇(D)ZHONGZHENG SUN¹, Shurong Miao¹, Hiroshi Funakubo¹, Yutaka Majima¹ (1.Tokyo Tech)

4:30 PM - 4:45 PM

△ [22p-A307-12] Thickness-dependency of ferroelectric property in HfO₂-CeO₂ film

〇Koji Hirai¹, Takahisa Shiraishi^1,2, Wakiko Yamaoka³, Risako Tsurumaru³, Yukari Inoue³, Hiroshi Funakubo¹ (1.Tokyo Tech., 2.Kumamoto Univ., 3.TDK Corp)

4:45 PM - 5:00 PM

[22p-A307-13] Thermally-induced crystallization and crystal structure of amorphous Hf_1-xZr_xO₂ deposited on Si(001)

〇Keito Takase¹, Ryouta Fujio¹, Manabu Ishimaru¹, Shinji Migita², Noriyuki Uchida² (1.Kyushu Inst Techol, 2.AIST)

5:00 PM - 5:15 PM

[22p-A307-14] Observation of Polarization Domain Structure of HfO₂ Films using Direct Piezoelectric Response Microscopy II

〇Takuto Hagiwara¹, Kasidit Toprasertpong², Shinichi Takagi², Norifumi Fujimura¹, Takeshi Yoshimura¹ (1.Osaka met. univ., 2.The univ. of Tokyo)

5:15 PM - 5:30 PM

[22p-A307-15] Nondestructive observation of dielectric breakdown process in HfO₂-based ferroelectriccapacitors: Operando laser-based photoelectron emission microscopy

〇Hirokazu Fujiwara¹, Yuki Itoya², Masaharu Kobayashi³, Cedric Bareille^4,5, Shik Shin^5,6, Toshiyuki Taniuchi^4,5 (1.ISSP, 2.IIS, 3.d.lab, 4.GSFS, 5.MIRC, 6.Univ. of Tokyo)

5:30 PM - 5:45 PM

[22p-A307-16] Influence of deposition of ITO top electrode on crystallization of (Hf,Zr)O₂ thin films

〇(M2)Junpei Ouchi¹, Hironori Fujisawa¹, Seiji Nakashima¹ (1.Hyogo Univ.)

5:45 PM - 6:00 PM

[22p-A307-17] Effect of Applying Electric Field during Annealing on Hf_0.5Zr_0.5O₂ Thin Films

〇(M1)Sho Tanaka¹, Minoru Noda¹ (1.Kyoto Inst. Tech.)

Session information

[22p-A307-1~17] CS.7 Code-sharing Session of 6.1 & 13.3 & 13.5

▼ [22p-A307-1] A Vertical Channel Ferroelectric/Anti-Ferroelectric FET with ALD InOx

[22p-A307-2] Field-Induced Polar-Axis Alignment for 3D High-Density Memory

[22p-A307-3] Structural analysis of ferroelectric Hf_xZr_1−xO₂/TiN fabricated using atomic layer deposition with different oxidant

[22p-A307-4] Mechanism of Ferroelectric Phase Assist in HfO₂-ZrO₂ Laminate Structures

[22p-A307-5] Origin of negative capacitance in ferroelectric capacitor system

[22p-A307-6] S-factor lowering derived from negative capacitance effect

[22p-A307-7] Influence of sputtering pressure on AlScN films

[22p-A307-8] Investigation of the decrease of interfacial layer thickness for the ferroelectric nondoped HfO₂ formation and device characteristics of MFSFET

[22p-A307-9] Investigation of ferroelectric HfN_x formation and MFSFET characteristics

▼ [22p-A307-10] Investigation of the etching process for Pt gate electrode on the ferroelectric property of 5 nm thick nondoped HfO₂ thin films

▼ [22p-A307-11] Demonstration of Ferroelectricity of 10 nm YHO7 Thin Film through Piezoelectric Force Microscopy

△ [22p-A307-12] Thickness-dependency of ferroelectric property in HfO₂-CeO₂ film

[22p-A307-13] Thermally-induced crystallization and crystal structure of amorphous Hf_1-xZr_xO₂ deposited on Si(001)

[22p-A307-14] Observation of Polarization Domain Structure of HfO₂ Films using Direct Piezoelectric Response Microscopy II

[22p-A307-15] Nondestructive observation of dielectric breakdown process in HfO₂-based ferroelectriccapacitors: Operando laser-based photoelectron emission microscopy

[22p-A307-16] Influence of deposition of ITO top electrode on crystallization of (Hf,Zr)O₂ thin films

[22p-A307-17] Effect of Applying Electric Field during Annealing on Hf_0.5Zr_0.5O₂ Thin Films

Authenticate

Session information

[22p-A307-1~17] CS.7 Code-sharing Session of 6.1 & 13.3 & 13.5

▼ [22p-A307-1] A Vertical Channel Ferroelectric/Anti-Ferroelectric FET with ALD InOx

▼ [22p-A307-10] Investigation of the etching process for Pt gate electrode on the ferroelectric property of 5 nm thick nondoped HfO2 thin films

▼ [22p-A307-11] Demonstration of Ferroelectricity of 10 nm YHO7 Thin Film through Piezoelectric Force Microscopy

△ [22p-A307-12] Thickness-dependency of ferroelectric property in HfO2-CeO2 film

Authenticate

▼ [22p-A307-10] Investigation of the etching process for Pt gate electrode on the ferroelectric property of 5 nm thick nondoped HfO₂ thin films

△ [22p-A307-12] Thickness-dependency of ferroelectric property in HfO₂-CeO₂ film