HYUGA MATSUDA

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Speaker, Author, Co-Author

Tue. Sep 20, 2022 1:00 PM - 7:00 PM B203 (B203)

Oral presentation
| 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-B203-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:30 PM - 2:45 PM

[20p-B203-7] High temperature annealing of N-implanted β-Ga₂O₃(001): face up anneal

〇(M1)HYUGA MATSUDA¹, Syunnosuke Miki¹, Ryusuke Iimura², Yi Tang¹, Kouhei Sasaki², Akihito Kuramata², Kazushi Miki¹ (1.Hyogo Univ., 2.NCT)