[20p-B203-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-B203-7] High temperature annealing of N-implanted β-Ga₂O₃(001): face up anneal

〇(M1)HYUGA MATSUDA¹, Syunnosuke Miki¹, Ryusuke Iimura², Yi Tang¹, Kouhei Sasaki², Akihito Kuramata², Kazushi Miki¹ (1.Hyogo Univ., 2.NCT)

Keywords:wide gap semiconductor, gallium oxide, p type dopant

In β-Ga2O3, activation annealing up to 1200°C using the ion implantation method has been used as a method to search for p-type dopants, and attention is being paid to see if there is carrier generation in activation annealing beyond this temperature. The obstacle to high-temperature annealing is the surface high-resistance layer, which is formed even in a nitrogen atmosphere. Therefore, as a method to suppress the formation of high surface resistive layers, we introduced a face to face arrangement and attempted activation annealing at temperatures above 1200°C.