Kazuki Ohnishi

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Speaker, Author, Co-Author

Wed. Sep 21, 2022 9:00 AM - 12:00 PM C200 (C200)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[21a-C200-1~11] 15.4 III-V-group nitride crystals

9:00 AM - 9:15 AM

[21a-C200-1] Surface kinetics in HVPE growth of GaN layers on GaN (0001) freestanding substrates

〇Kazuki Ohnishi¹, Naoki Fujimoto¹, Shugo Nitta¹, Hirotaka Watanabe¹, Yoshio Honda¹, Hiroshi Amano^1,2,3 (1.IMaSS, Nagoya Univ., 2.ARC, Nagoya Univ., 3.VBL, Nagoya Univ.)

9:45 AM - 10:00 AM

[21a-C200-4] Preparation of thick Mg-doped p-type GaN layers grown by halide vapor phase epitaxy

〇Kazuki Ohnishi¹, Naoki Fujimoto¹, Shugo Nitta¹, Hirotaka Watanabe¹, Yoshio Honda¹, Hiroshi Amano^1,2,3 (1.IMaSS, Nagoya Univ., 2.ARC, Nagoya Univ., 3.VBL, Nagoya Univ.)

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