Tadahito Inoue

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Speaker, Author, Co-Author

Wed. Sep 21, 2022 1:15 PM - 6:45 PM B203 (B203)

Oral presentation
| 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21p-B203-1~20] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

3:45 PM - 4:00 PM

△ [21p-B203-10] Single crystal growth of (InGaO₃)₁(ZnO)₂ by the pressurized Optical Floating Zone method and physical property

〇Tadahito Inoue¹, Kawamura Yusuke¹, Kase Naoki¹, Miyakawa Nobuaki¹ (1.Tokyo Univ of Scie.)