Yoshikaze Ito

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Speaker, Author, Co-Author

Fri. Sep 23, 2022 9:00 AM - 12:00 PM B204 (B204)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[23a-B204-1~11] 13.7 Compound and power devices, process technology and characterization

10:00 AM - 10:15 AM

[23a-B204-5] GaN channel thickness dependence in AlGaN / GaN HEMT with back barriers

〇Yoshikaze Ito¹, Seita Tamai¹, Takuya Hoshi², Takahiro Gotow¹, Yasuyuki Miyamoto¹ (1.Tokyo tech., 2.NTT Device Technology Lab.)