[23a-B204-1~11] 13.7 Compound and power devices, process technology and characterization

[23a-B204-5] GaN channel thickness dependence in AlGaN / GaN HEMT with back barriers

〇Yoshikaze Ito¹, Seita Tamai¹, Takuya Hoshi², Takahiro Gotow¹, Yasuyuki Miyamoto¹ (1.Tokyo tech., 2.NTT Device Technology Lab.)

Keywords:GaN HEMT, Back barrier layer, Channel layer

AlGaN/GaN HEMTs with 65 nm channel and 38 nm channel and back barrier layers were fabricated. The isolation process caused damage related to the thickness of the channel layer, possibly due to the surface oxidation, resulting in deteriorated characteristics such as sheet resistance and transconductance. Although the suppression of the short-channel effect by the back-barrier layer was confirmed, no significant property change due to the channel layer thickness was observed in the range of fabricated gate length.