Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[21p-A106-1~18] 15.5 Group IV crystals and alloys

Wed. Sep 21, 2022 1:00 PM - 5:45 PM A106 (A106)

Kaoru Toko(Univ. of Tsukuba), Ryo Matsumura(National Institute for Materials Science (NIMS))

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[21p-A106-1] Crystallinity improvement of ultra-high Sn contents Ge_1−xSn_x heteroepitaxial layers grown on InP substrates

〇Komei Takagi¹, Shigehisa Shibayama¹, Masashi Kurosawa¹, Mitsuo Sakashita¹, Osamu Nakatsuka^1,2 (1.Grad. Sch. Eng., Nagoya Univ, 2.IMaSS, Nagoya Univ)

1:15 PM - 1:30 PM

[21p-A106-2] Formation of direct transition Ge_1-xSn_xhetero epitaxial layer on Si(111) substrate

〇Shunsuke Mori¹, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Masashi Kurosawa¹, Osamu Nakatsuka^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

1:30 PM - 1:45 PM

△ [21p-A106-3] Evaluation of Band Structure in Strained Single Crystalline Si_1-xSn_x

〇Keita Sahara¹, Ryo Yokogawa^1,2, Yuki Shibayama¹, Yusuke Hibino^2,3, Masashi Kurosawa⁴, Atsushi Ogura^1,2 (1.Meiji Univ., 2.MREL, 3.NITS, 4.Nagoya Univ.)

1:45 PM - 2:00 PM

[21p-A106-4] TEM Observation of Cracks Formed in Strained SiGe/Ge (111)

〇Kouta Tajima¹, Junji Yamanaka¹, Keisuke Arimoto¹, Kosuke Hara¹, Yuya Wagatuma², Kentarou Sawano² (1.Univ. of Yamanashi, 2.Tokyo City Univ.)

2:00 PM - 2:15 PM

[21p-A106-5] Influences of mesa-etching depth on crack propagation in strained SiGe on Ge(111)

〇Youya Wagatsuma¹, Rena Kanesawa¹, Alam Md. Mahfuz^1,2, Kazuya Okada¹, Takahiro Inoue¹, Michihiro Yamada³, Kohei Hamaya^3,4, Kentarou Sawano¹ (1.Tokyo City Univ., 2.Univ. of Barishal, 3.CSRN, Osaka Univ., 4.OTRI, Osaka Univ.)

2:15 PM - 2:30 PM

[21p-A106-6] Influences of crack generation on transport properties in strained SiGe grown on Ge-on-Si(111)

〇Daigo Ichikawa¹, Youya Wagatsuma¹, Michihiro Yamada², Kohei Hamaya^2,3, Kentarou Sawano¹ (1.Tokyo City Univ., 2.CSRN, Osaka Univ., 3.OTRI, Osaka Univ.)

2:30 PM - 2:45 PM

△ [21p-A106-7] Distribution Evaluation of Optical Properties in Strain Relaxed SiGe Films with Graded SiGe Buffer Layers

〇Yuki Shibayama¹, Ryo Yokogawa^1,2, Atsushi Ogura^1,2 (1.Meiji Univ., 2.Meiji Renewable Energy Laboratory.)

2:45 PM - 3:00 PM

[21p-A106-8] Observation of resonant light emission by fabrication of branch-like microbridge based on Ge-on-Si (110)

〇Takahiro Inoue¹, Youya Wagatsuma¹, Reo Ikegaya¹, Ayaka Odashima¹, Masaki Nagao¹, Kentarou Sawano¹ (1.Tokyo City Univ.)

3:00 PM - 3:15 PM

[21p-A106-9] Effects of slit insertion on optical properties for biaxially strained Ge microbridges

〇Takuya Komazawa¹, Reo Ikegaya¹, Takahiro Inoue¹, Youya Wagatsuma¹, Kentarou Sawano¹ (1.Tokyo City Univ.)

3:30 PM - 3:45 PM

[21p-A106-10] Strong Room-temperature EL emissions from strained SiGe/Ge-on-Si(111)LEDs

〇Shuya Kikuoka¹, Youya Wagatsuma¹, Yuwa Sugiura¹, Rena Kanesawa¹, Michihiro Yamada², Kohei Hamaya^2,3, Kentarou Sawano¹ (1.Tokyo City Univ., 2.CSRN, Osaka Univ., 3.OTRI, Osaka Univ.)

3:45 PM - 4:00 PM

[21p-A106-11] Fabrication of SiGe/Ge Multiple Quantum Wells on Ge-on-Si (100) and Their Optical Properties

〇Rena Kanesawa¹, Youya Wagatsuma¹, Syuya Kikuoka¹, Yuwa Sugiura¹, Kentarou Sawano¹ (1.Tokyo City Univ.)

4:00 PM - 4:15 PM

[21p-A106-12] Self-formation of Ge_1−xSn_x quantum dots with high thermal stability

〇Kaoru Hashimoto¹, Shigehisa Shibayama¹, Koji Asaka¹, Masashi Kurosawa¹, Mitsuo Sakashita¹, Osamu Nakatsuka^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

4:15 PM - 4:30 PM

△ [21p-A106-13] Triaxial Strain Evaluation for Carbon-doped Silicon Nanowire using X-ray Reciprocal Space Mapping (III)

〇Kazutoshi Yoshioka^1,2, Kirito Cho¹, Yuta Ito¹, Sho Sugawa¹, Ichiro Hirosawa^2,3, Takeshi Watanabe⁴, Ryo Yokogawa^1,2, Atsushi Ogura^1,2 (1.Meiji Univ., 2.MREL, 3.SAGA-LS, 4.JASRI)

4:30 PM - 4:45 PM

△ [21p-A106-14] Study on Layer Transfer of Ultrathin Ge Crystals Segregated on Al/Ge(111)

〇Keigo Matsushita¹, Akio Ohta¹, Shigehisa Shibayama¹, Noriyuki Taoka¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

4:45 PM - 5:00 PM

[21p-A106-15] Impacts of Si Capping Layer in Formation of Ultra-Thin Nickel Silicide Film

〇Keisuke Kimura¹, Noriyuki Taoka¹, Shunsuke Nishimura¹, Akio Ohta¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Grad. Sch. of Eng., Nagoya Univ.)

5:00 PM - 5:15 PM

[21p-A106-16] Electrical and Electronic properties of Mono-crystalline Nickel-germanide Films

〇Shunsuke Nishimura¹, Noriyuki Taoka¹, Akio Ohta¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

5:15 PM - 5:30 PM

[21p-A106-17] Formation of multilayer silicane nanosheets on high-resistivity Si(111) substrates

Yoshitsune Ito¹, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Osamu Nakatsuka^1,2, 〇Masashi Kurosawa¹ (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

5:30 PM - 5:45 PM

△ [21p-A106-18] Helicity dependent photoelectric conversion in Ge nanosheet on Al grown by segregation method

〇Taiki Nishijima¹, Keigo Matsushita², Ei Shigematsu¹, Ryo Ohshima¹, Akio Ohta², Yuichiro Ando¹, Masashi Shiraishi¹ (1.Kyoto Univ., 2.Nagoya Univ.)

Session information

[21p-A106-1~18] 15.5 Group IV crystals and alloys

[21p-A106-1] Crystallinity improvement of ultra-high Sn contents Ge_1−xSn_x heteroepitaxial layers grown on InP substrates

[21p-A106-2] Formation of direct transition Ge_1-xSn_xhetero epitaxial layer on Si(111) substrate

△ [21p-A106-3] Evaluation of Band Structure in Strained Single Crystalline Si_1-xSn_x

[21p-A106-4] TEM Observation of Cracks Formed in Strained SiGe/Ge (111)

[21p-A106-5] Influences of mesa-etching depth on crack propagation in strained SiGe on Ge(111)

[21p-A106-6] Influences of crack generation on transport properties in strained SiGe grown on Ge-on-Si(111)

△ [21p-A106-7] Distribution Evaluation of Optical Properties in Strain Relaxed SiGe Films with Graded SiGe Buffer Layers

[21p-A106-8] Observation of resonant light emission by fabrication of branch-like microbridge based on Ge-on-Si (110)

[21p-A106-9] Effects of slit insertion on optical properties for biaxially strained Ge microbridges

[21p-A106-10] Strong Room-temperature EL emissions from strained SiGe/Ge-on-Si(111)LEDs

[21p-A106-11] Fabrication of SiGe/Ge Multiple Quantum Wells on Ge-on-Si (100) and Their Optical Properties

[21p-A106-12] Self-formation of Ge_1−xSn_x quantum dots with high thermal stability

△ [21p-A106-13] Triaxial Strain Evaluation for Carbon-doped Silicon Nanowire using X-ray Reciprocal Space Mapping (III)

△ [21p-A106-14] Study on Layer Transfer of Ultrathin Ge Crystals Segregated on Al/Ge(111)

[21p-A106-15] Impacts of Si Capping Layer in Formation of Ultra-Thin Nickel Silicide Film

[21p-A106-16] Electrical and Electronic properties of Mono-crystalline Nickel-germanide Films

[21p-A106-17] Formation of multilayer silicane nanosheets on high-resistivity Si(111) substrates

△ [21p-A106-18] Helicity dependent photoelectric conversion in Ge nanosheet on Al grown by segregation method

Authenticate

Session information

[21p-A106-1~18] 15.5 Group IV crystals and alloys

△ [21p-A106-3] Evaluation of Band Structure in Strained Single Crystalline Si1-xSnx

△ [21p-A106-7] Distribution Evaluation of Optical Properties in Strain Relaxed SiGe Films with Graded SiGe Buffer Layers

△ [21p-A106-13] Triaxial Strain Evaluation for Carbon-doped Silicon Nanowire using X-ray Reciprocal Space Mapping (III)

△ [21p-A106-14] Study on Layer Transfer of Ultrathin Ge Crystals Segregated on Al/Ge(111)

△ [21p-A106-18] Helicity dependent photoelectric conversion in Ge nanosheet on Al grown by segregation method

Authenticate

△ [21p-A106-3] Evaluation of Band Structure in Strained Single Crystalline Si_1-xSn_x