Oral presentation

6 Thin Films and Surfaces » 6.2 Carbon-based thin films

[22p-A202-1~22] 6.2 Carbon-based thin films

Thu. Sep 22, 2022 1:00 PM - 7:00 PM A202 (A202)

Masami Aono(Kagoshima Univ.), Hideaki Yamada(AIST), Shinya Ohmagari(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[22p-A202-1] Effects of Hydrogen and Argon Dilution on the Electrical Properties of Silicon and Nitrogen Doped Diamond-Like Carbon Films by Plasma-Enhanced CVD

〇Yuya Sasaki¹, Hiroya Osanai¹, Yuta Murono¹, Masayoshi Sato¹, Yasuyuki Kobayashi¹, Yoshiharu enta¹, Yushi Suzuki¹, Hideki Nakazawa¹ (1.Hriosaki Univ.)

1:15 PM - 1:30 PM

[22p-A202-2] Water-repellent hydrogen-free DLC by four targets facing sputtering method.

〇Futa Kobayashi¹, Tetsuya Saruwatari¹ (1.Keihin Ramtech)

1:30 PM - 1:45 PM

[22p-A202-3] Fabrication of a-CN_x:H films with high nitrogen content from the microwave plasma CVD of the C₂H₂/N₂ gas mixture ¾ Is [N]/([N]+[C])>0.5 attainable?

〇Haruhiko Ito¹, Yuga Sato¹, Tsuneo Suzuki¹, Hidetoshi Saitoh¹ (1.Nagaoka Univ Tech)

1:45 PM - 2:00 PM

[22p-A202-4] Effect of Hydrogen on the Properties of Boron Carbide Films Prepared by Magnetron Sputtering

〇Tatsuya Nishida¹, Ryu Taniguchi¹, Masayoshi Sato¹, Yasuyuki Kobayashi¹, Yoshiharu Enta¹, Yushi Suzuki¹, Hirokazu Fukidome², Hideki Nakazawa¹ (1.Hirosaki Univ., 2.Tohoku Univ.)

2:00 PM - 2:15 PM

[22p-A202-5] Pressure Dependence of Synthesis of Layered Carbon Nitride Films by Thermal CVD

〇Shigeki Takama¹, Hitoe Habuchi¹, Hayate Aoki¹, Tamio Iida¹ (1.Natl. Inst. Technol., Gifu Coll.)

2:15 PM - 2:30 PM

[22p-A202-6] PEEM study of h-BN growth on Ni foil using backside to surface diffusion

Ryunosuke Yusa¹, Hiroaki Aoyama¹, Boxuan Li¹, Syuichi Ogawa^1,2, 〇Tadashi Abukawa^1,2 (1.IMRAM Tohoku Univ., 2.SRIS Tohoku Univ.)

2:30 PM - 2:45 PM

[22p-A202-7] Fabrication of field effect device using layered carbon nitride film

〇Masaki Tachibana¹, Kota Higuchi¹, Noriyuki Urakami^1,2, Yoshio Hashimoto^1,2 (1.Shinshu Univ., 2.Shinshu Univ. RISM)

2:45 PM - 3:00 PM

[22p-A202-8] Investigation of n-type g-C₃N₄ and the vertical electronic device

〇Kota Higuchi¹, Masaki Tachibana¹, Noriyuki Urakami^1,2, Yoshio Hashimoto^1,2 (1.Shinshu Univ., 2.Shinshu Univ. RISM)

3:15 PM - 3:30 PM

△ [22p-A202-9] Electrochemical Properties of Conductive Ultrananocrystalline Diamond Thin Films Deposited by Coaxial Arc Plasma Deposition

〇Hiroki Hashiguchi¹, Satoki Nagano¹, Hiroshi Naragino¹, Tsuyoshi Yoshitake¹ (1.Interdiscip. Grad. Sch. Eng. Sci., Kyushu Univ.)

3:30 PM - 3:45 PM

[22p-A202-10] Negative Bias Frequency Effects on Structural and Mechanical Properties of Nanodiamond Composite Films Deposited by Coaxial Arc Plasma

〇(M2)Seishiro Saito¹, Ali Mohamed^1,2, Koki Murasawa³, Hiroshi Naragino¹, Tsuyoshi Yoshitake¹ (1.Kyushu Univ., 2.Al-Azhar Univ., 3.OSG Corp)

3:45 PM - 4:00 PM

[22p-A202-11] DC Glow Plasma Source with Boron-Doped Diamond Cathode

〇Hisao Miyazaki¹, Hisashi Yoshida¹, Shigeya Kimura¹ (1.Toshiba RDC)

4:00 PM - 4:15 PM

[22p-A202-12] Observation of Cobalt behavior on Untreated Cemented Carbide Substrate in Diamond Film Deposition by Hot Filament-CVD

〇Yoshinori Saiki¹, Bando Takahiro¹, Toru Harigai¹, Hirofumi Takikawa¹, Takahiro Hattori², Hiroaki Sugita², Natsue Kawahara³, Kunihiko Tanaka³ (1.Toyohashi Univ. Technol., 2.OSG Coating Service Co., Ltd, 3.Nagaoka Univ. Technol.)

4:15 PM - 4:30 PM

[22p-A202-13] Selective formation of oriented diamond nuclei on silicon by bias change

〇(M2)Satsuki Ariji¹, Go Morita¹, Akari Yoshida¹, Hideo Isshiki¹ (1.Dentsu Univ.)

4:30 PM - 4:45 PM

△ [22p-A202-14] The dependence of hydrogen plasma etching on diamond crystal orientation

〇Daichi Yoshii¹, Mami Fujii², Mutsunori Uenuma¹, Yukiharu Uraoka¹ (1.NAIST, 2.Kindai Univ.)

4:45 PM - 5:00 PM

[22p-A202-15] Formation of stacking faults in Mn-doped diamond (111) thin films

〇Makoto Kawano¹, Kazuyuki Hirama¹, Yoshitaka Taniyasu¹, Kazuhide Kumakura¹ (1.NTT BRL)

5:15 PM - 5:30 PM

[22p-A202-16] Fabrication of Li-dope diamond by nuclear transmutation

〇Yasuto Miyake¹, Hiroki Okuno¹, Hideyuki Watanabe² (1.RIKEN, 2.AIST)

5:30 PM - 5:45 PM

[22p-A202-17] Structural investigations of B-ion implanted diamond treated by high pressure and high temperature

〇Daiki Toriu¹, Kento Higashiura¹, Rei Fukuta¹, Fumitaro Ishikawa², Toru Shinmei³, Tetsuo Irifune³ (1.Ehime Univ., 2.Hokkaido Univ. RCIQE, 3.Ehime Univ. GRC)

5:45 PM - 6:00 PM

[22p-A202-18] Off-angle dependence of growth rate and perfectly aligned NV center properties in CVD growth on (111) diamond substrates.

〇(D)Takeyuki Tsuji¹, Takayuki Iwasaki¹, Mutsuko Hatano¹ (1.Tokyo Institute of Technology)

6:00 PM - 6:15 PM

△ [22p-A202-19] Buried growth of p⁺ film on atomically flat N-doped diamond (111) by lateral growth with heavy B-doping

〇(D)Kazuki Kobayashi¹, Xufang Zhang¹, Toshiharu Makino², Tsubasa Matsumoto¹, Takao Inokuma¹, Satoshi Yamasaki¹, C.E. Nebel^1,3, Norio Tokuda¹ (1.Kanazawa Univ., 2.AIST, 3.Diacara)

6:15 PM - 6:30 PM

△ [22p-A202-20] X-ray diffraction characterization of inch-diameter high-quality CVD diamond layers grown on sapphire substrates in comparison to MgO substrates

〇(M2)Ryo Masaki¹, Ryota Takaya¹, Koji Koyama², Makoto Kasu¹, Seongwoo Kim² (1.Saga Univ., 2.Adamant Namiki Precision Jewel Co.,Ltd)

6:30 PM - 6:45 PM

[22p-A202-21] Initial growth process of inch-diameter high-quality CVD diamond layers grown on sapphire substrates in comparison to MgO substrates

〇(M2)Ryo Masaki¹, Ryota Takaya¹, Koji Koyama², Makoto Kasu¹, Seongwoo Kim² (1.Saga Univ., 2.Adamant Namiki Precision Jewel Co., Ltd.)

6:45 PM - 7:00 PM

▼ [22p-A202-22] Improved Crystal Quality of Diamond Grown on c-Direction Misoriented Sapphire Substrate

〇(M1)JACQUES DAGBETO¹, Koji Koyama², Makoto Kasu¹, Seongwoo Kim² (1.Saga Univ., 2.Adamant Namiki Precision Jewel Co., Ltd)

Session information

[22p-A202-1~22] 6.2 Carbon-based thin films

[22p-A202-1] Effects of Hydrogen and Argon Dilution on the Electrical Properties of Silicon and Nitrogen Doped Diamond-Like Carbon Films by Plasma-Enhanced CVD

[22p-A202-2] Water-repellent hydrogen-free DLC by four targets facing sputtering method.

[22p-A202-3] Fabrication of a-CN_x:H films with high nitrogen content from the microwave plasma CVD of the C₂H₂/N₂ gas mixture ¾ Is [N]/([N]+[C])>0.5 attainable?

[22p-A202-4] Effect of Hydrogen on the Properties of Boron Carbide Films Prepared by Magnetron Sputtering

[22p-A202-5] Pressure Dependence of Synthesis of Layered Carbon Nitride Films by Thermal CVD

[22p-A202-6] PEEM study of h-BN growth on Ni foil using backside to surface diffusion

[22p-A202-7] Fabrication of field effect device using layered carbon nitride film

[22p-A202-8] Investigation of n-type g-C₃N₄ and the vertical electronic device

△ [22p-A202-9] Electrochemical Properties of Conductive Ultrananocrystalline Diamond Thin Films Deposited by Coaxial Arc Plasma Deposition

[22p-A202-10] Negative Bias Frequency Effects on Structural and Mechanical Properties of Nanodiamond Composite Films Deposited by Coaxial Arc Plasma

[22p-A202-11] DC Glow Plasma Source with Boron-Doped Diamond Cathode

[22p-A202-12] Observation of Cobalt behavior on Untreated Cemented Carbide Substrate in Diamond Film Deposition by Hot Filament-CVD

[22p-A202-13] Selective formation of oriented diamond nuclei on silicon by bias change

△ [22p-A202-14] The dependence of hydrogen plasma etching on diamond crystal orientation

[22p-A202-15] Formation of stacking faults in Mn-doped diamond (111) thin films

[22p-A202-16] Fabrication of Li-dope diamond by nuclear transmutation

[22p-A202-17] Structural investigations of B-ion implanted diamond treated by high pressure and high temperature

[22p-A202-18] Off-angle dependence of growth rate and perfectly aligned NV center properties in CVD growth on (111) diamond substrates.

△ [22p-A202-19] Buried growth of p⁺ film on atomically flat N-doped diamond (111) by lateral growth with heavy B-doping

△ [22p-A202-20] X-ray diffraction characterization of inch-diameter high-quality CVD diamond layers grown on sapphire substrates in comparison to MgO substrates

[22p-A202-21] Initial growth process of inch-diameter high-quality CVD diamond layers grown on sapphire substrates in comparison to MgO substrates

▼ [22p-A202-22] Improved Crystal Quality of Diamond Grown on c-Direction Misoriented Sapphire Substrate

Authenticate

Session information

[22p-A202-1~22] 6.2 Carbon-based thin films

△ [22p-A202-9] Electrochemical Properties of Conductive Ultrananocrystalline Diamond Thin Films Deposited by Coaxial Arc Plasma Deposition

△ [22p-A202-14] The dependence of hydrogen plasma etching on diamond crystal orientation

△ [22p-A202-19] Buried growth of p+ film on atomically flat N-doped diamond (111) by lateral growth with heavy B-doping

△ [22p-A202-20] X-ray diffraction characterization of inch-diameter high-quality CVD diamond layers grown on sapphire substrates in comparison to MgO substrates

▼ [22p-A202-22] Improved Crystal Quality of Diamond Grown on c-Direction Misoriented Sapphire Substrate

Authenticate

△ [22p-A202-19] Buried growth of p⁺ film on atomically flat N-doped diamond (111) by lateral growth with heavy B-doping