[23a-C200-1~11] 15.4 III-V-group nitride crystals

Fri. Sep 23, 2022 9:00 AM - 12:00 PM C200 (C200)

Hiroto Sekiguchi(Toyohashi Univ. of Tech.), Kenjiro Uesugi(Mie Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[23a-C200-1] Red emission enhancement from InGaN nanocolumn
by Ag-based plasmonic crystals with honeycomb lattice

〇Ryoma Shirotori¹, Koichi Okamoto², Rie Togashi^3,4, Katsumi Kishino⁴, Takao Oto¹ (1.Yamagata Univ., 2.Osaka Metro. Univ., 3.Sophia Univ., 4.Sophia Nanotech.)

9:15 AM - 9:30 AM

[23a-C200-2] Introduction of chirality to InGaN nanopillar arrays and their optical rotation

〇Yuta Asai¹, Takeki Aikawa², Umito Kurabe², Akihiko Kikuchi^2,3,4, Takao Oto¹ (1.Yamagata Univ., 2.Sophia Univ., 3.Sophia Photon., 4.Sophia Semicon.)

9:30 AM - 9:45 AM

[23a-C200-3] Fabrication of InGaN/GaN MQW fine nanopillar arrays by HEATE process

〇Takeki Aikawa¹, Akihiko Kikuchi^1,2,3 (1.Sophia Univ., 2.Sophia Photonics Research Center, 3.Sophia Semiconductor Research Institute)

9:45 AM - 10:00 AM

[23a-C200-4] Formation and optical characteristics of GaN:Eu/GaN nanowires with high aspect ratio grown by organometallic vapor phase epitaxy

Takuma Yoshimura¹, 〇Jun Tatebayashi^1,2, Takaya Otabara¹, Dolf Timmerman¹, Shuhei Ichikawa^1,3, Yasufumi Fujiwara¹ (1.Osaka Univ., 2.QIQB, Osaka Univ., 3.UHVEM, Osaka Univ.)

10:00 AM - 10:15 AM

[23a-C200-5] Mid-infrared thermal radiation from GaN/Au and SI-GaN/n++ -GaN micro-stripe structures

〇Bojin Lin¹, Lai Lai aye Hnin¹, Haruki Orito¹, Bei Ma¹, Kohei Ueno², Hiroshi Fujioka², Hideto Miyake³, Yoshihiro Ishitani¹ (1.Chiba Univ., 2.Univ. of Tokyo, 3.Mie Univ.)

10:30 AM - 10:45 AM

[23a-C200-6] [Young Scientist Presentation Award Speech] Introduction of 2D-hetero structures to improve the Q-factor of III-nitride-based photonic crystal resonators in the visible range

〇Takenori Iwaya¹, Shuhei Ichikawa^1,2, Dolf Timmerman¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ., 2.Research Center for UHVEM, Osaka Univ.)

10:45 AM - 11:00 AM

[23a-C200-7] Analysis of optical characterization of InGaN-MQW meso-porous membrane

〇Umito Kurabe¹, Yuki Yamazaki¹, Koji Yoneta¹, Akihiko Kikuchi^1,2,3 (1.Sophia Univ., 2.Sophia Photonics Research Center, 3.Sophia Semiconductor Research Institute)

11:00 AM - 11:15 AM

△ [23a-C200-8] Demonstration of GaN:Eu/GaN nanowire LEDs towards flexible light-emitting devices

〇Takaya Otabara¹, Jun Tatebayashi^1,2, Takuma Yoshimura¹, Timmerman Dolf¹, Shuhei Ichikawa^1,3, Yasufumi Fujiwara¹ (1.Grad. Sch. Eng. ,Osaka Univ., 2.QIQB, 3.Research Center for UHVEM)

11:15 AM - 11:30 AM

△ [23a-C200-9] Growth and fabrication of red-nanocolumn μ-LED using nanocolumn shape control technology

〇(PC)Jumpei Yamada¹, Ai Mizuno¹, Hiromi Akagawa³, Kenya Yoshimura², Koji Takahashi², Rie Togashi^1,2, Ichirou Nomura^1,2, Tomohiro Yamaguchi³, Tohru Honda³, Katsumi Kishino¹ (1.Sophia Nanotech., 2.Sophia Univ., 3.Kogakuin Univ.)

11:30 AM - 11:45 AM

[23a-C200-10] Red emission (635nm) InGaN-based nanocolumn LEDs

〇Ai Mizuno¹, Tatsuya Honda¹, Jumpei Yamada¹, Rie Togashi^1,2, Ichirou Nomura^1,2, Katsumi Kishino¹ (1.Sophia Nanotech., 2.Sophia Univ.)

11:45 AM - 12:00 PM

[23a-C200-11] Local strain analysis of a single GaN-based quantum shell grown on a GaN substrate by using a three-dimensional reciprocal space map

〇Shoya Ota¹, Ryota Kobayashi¹, Nobuhiro Yasuda², Yasuhiko Imai², Tomoyo Nakao³, Sigeo Arai³, Koki Aoyama¹, Kazuki Nishimura¹, Satoshi Kamiyama¹, Daichi Imai¹, Takao Miyajima¹ (1.Meijo Univ., 2.JASRI, 3.Nagoya Univ.)

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