[23p-C200-1~11] 15.4 III-V-group nitride crystals

Fri. Sep 23, 2022 1:30 PM - 4:30 PM C200 (C200)

Ryota Ishii(Kyoto Univ.), Jun Tatebayashi(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[23p-C200-1] Luminescence properties of orderd InGaN/GaN nanocolumns on top-down nanotemplate for improving luminescence color purity

〇Shunsuke Kudo¹, Kenya Yoshimura¹, Koji Takahashi¹, Jumpei Yamada², Rie Togashi^1,2, Ichirou Nomura^1,2, Katsumi Kishino² (1.Sophia Univ., 2.Sophia Nanotech.)

1:45 PM - 2:00 PM

△ [23p-C200-2] Red emission properties of InGaN/GaN Nanocolumns grown by nanotemplate selective area growth for application to μ-LEDs

〇Kenya Yoshimura¹, Koji Takahashi¹, Shunsuke Kudo¹, Jumpei Yamada², Ai Mizuno², Rie Togashi^1,2, Ichirou Nomura^1,2, Katsumi Kishino² (1.Sophia Univ., 2.Sophia Nanotech.)

2:00 PM - 2:15 PM

[23p-C200-3] Suppression of c-plane emission in GaInN-based MQS/NW LEDs

〇Sae Katsuro¹, Weifang Lu², Nanami Nakayama¹, Soma Inaba¹, Yukimi Jinno¹, Shiori Yamamura¹, Ayaka Shima¹, Shiori Ii¹, Mizuki Takahashi¹, Yuki Yamanaka¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Xiamen Univ.)

2:15 PM - 2:30 PM

△ [23p-C200-4] Control of the emitting plane of GaInN/GaN quantum-shell LEDs

〇(M1)Souma Inaba¹, Weifang Lu², Sae Katsuro¹, Nanami Nakayama¹, Ayaka Shima¹, Yukimi Jinno¹, Siori Yamamura¹, Siori Ii¹, Mizuki Takahashi¹, Yuki Yamamura¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijou Univ., 2.Xiamen Univ.)

2:30 PM - 2:45 PM

△ [23p-C200-5] Investigation of external quantum efficiency in GaInN-based micro-LEDs with different emission wavelengths and diameters

〇(M1)Tatsunari Saito¹, Yuta Imaizumi¹, Tsuyoshi Nagawasa¹, Yoshinobu Suehiro¹, Norikatsu Koide¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹ (1.Meijo Univ.)

2:45 PM - 3:00 PM

△ [23p-C200-6] Stray light reduction in monolithic Micro LED arrays

〇Yuta Imaizumi¹, Tatsunari Saito¹, Tsuyoshi Nagasawa¹, Yoshinobu Suehiro¹, Norikatsu Koide¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹ (1.Meijo Univ)

3:15 PM - 3:30 PM

△ [23p-C200-7] Characterization of luminescence properties of InGaN QWs on (20-21) GaN templates with flat surfaces by introducing Eu-doped GaN underlayers

〇Atsushi Takeo¹, Shuhei Ichikawa^1,2, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ., 2.Research Center for UHVEM, Osaka Univ.)

3:30 PM - 3:45 PM

△ [23p-C200-8] Hydrogen Iodide (HI) Neutral Beam Etching for InGaN/GaN Micro-LED

〇(M2)Takahiro Ishihara¹, Ohori Daisuke¹, Xuelun Wang^3,4, Kazuhiko Endo³, Natori Nobuhiro⁵, Tanimoto Yousuke⁵, Yiming Li⁶, Seiji Samukawa^6,1,2 (1.IFS, Tohoku Univ., 2.AIMR, Tohoku Univ., 3.AIST., 4.IMaSS, Nagoya Univ., 5.Showa Denko K.K., 6.NYCU)

3:45 PM - 4:00 PM

▼ [23p-C200-9] Micro-LED sidewall damage compensation by the hydrogen plasma passivation

〇(DC)Pavel Sergeyevich Kirilenko¹, Daisuke Iida¹, Zhe Zhuang², Kazuhiro Ohkawa¹ (1.King Abdullah Univ. of Science and Technology, 2.School of Electronic Science and Engineering, Nanjing Univ.)

4:00 PM - 4:15 PM

[23p-C200-10] Demonstration of high light-output power density InGaN-based red LEDs

〇Daisuke Iida¹, Pavel Kirilenko¹, Martin Velazquez-Rizo¹, Zhe Zhuang¹, Mohammed Najmi¹, Kazuhiro Ohkawa¹ (1.KAUST)

4:15 PM - 4:30 PM

△ [23p-C200-11] Evaluation of temperature in the brain tissue during MicroLED drive for effective optical stimulation

〇Hiroki Yasunaga¹, Hibiki Takeuchi¹, Koyo Mizuguchi¹, Atsushi Nishikawa², Loesing Alexander², Susumu Setogawa³, Noriaki Ohkawa³, Hiroto Sekiguchi¹ (1.Toyohashi Tech, 2.ALLOS, 3.Dokkyo Med. Univ.)

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