[20a-B203-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20a-B203-1] Preparation of Cu_xO film by mist CVD method - Relationship between mist spatial distribution in a tube furnace and film structure -.

〇(M2)Ryota Sato¹, Kojun Yokoyama¹, Hajime Shirai¹ (1.Saitama Univ.)

Keywords:mist CVD, Cu2O

Previously, we have reported on the relationship between grain size distribution, film densification, and Si interface carrier transport properties in AlO_x, TiO₂, and Al_1-xTi_xO_y films deposited by mist CVD method. In particular, we have reported that the DC bias V_m applied during mist transport is effective in improving film quality and Si interface properties. In this report, we investigate the effect of spatial distribution of temperature T_f in the tube furnace on mist transport and Cu_xO film structure through semiconductor Cu_xO deposition with and without V_m application.