[20a-B204-1~11] 6.3 Oxide electronics

△ [20a-B204-7] Sputtering deposition conditions and gas sensing properties of SnO2

〇Keita Ohdachi¹, Makoto Kashiwagi¹, Yuki Oguchi¹, Akira Nakamura², Haruka Yamamoto³, Yuzo Shigesato¹ (1.AGU, 2.MinebeaMitsumi Inc., 3.JEOL Ltd.)

Keywords:gas sensor, Sputtering thin-film

Semiconductor gas sensors deposited by the sputtering method can perform high sensitivity to the low-concentration H2 gas, which can be fabricated as the “on-chip” sensors because of their small size and lightweight. Therefore, it is expected to contribute to hydrogen utilization technologies as a low-cost sensor of low power consumption. In this study, we have studied the thickness dependent properties (SnO2 film structure and the electrical) as well as the sensitivity towards an atmosphere containing a small amount of hydrogen gas by in-situ Hall effect measurements.