[20a-C200-1~11] 15.4 III-V-group nitride crystals

[20a-C200-5] Investigation of Initial Growth of GaN Grown on ScAlMgO₄ Substrate by RF-MBE

〇Yuichi Wada¹, Yuya Kuroda¹, Naoki Goto¹, Takashi Fujii¹, Shinichiro Mouri¹, Momoko Deura², Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.R-GIRO)

Keywords:ScAlMgO4, TEM, GaN

In the direct growth of GaN on ScAlMgO₄ (SAM) substrates using RF-MBE method, threading dislocations and existence of cubic GaN phase have been problems. In order to find the causes of these problems, in this study, we focused initial growth phase. Growth of the ultra-thin GaN film on the SAM substrate directly and observation of the film structure carried out.