[20a-C202-1~11] 15.7 Crystal characterization, impurities and crystal defects

[20a-C202-6] X-ray topographic observation of defect structure in ScAlMgO₄ cross-section wafer

〇Kotaro Ishiji¹, Takashi Fujii^2,3, Tsutomu Araki², Yuji Shiraishi³, Tsuguo Fukuda³ (1.SAGA-LS, 2.Ritsumeikan Univ, 3.Fukuda Crystal Lab)

Keywords:X-ray topography, Crystal material, Defect structure

To understand the unique defect structure of ScAlMgO₄(SAM) crystal, the defect structure of SAM cross-section wafer including the early and late-growth stages was observed using synchrotron X-ray topography. In the early-growth stage, the thermal strain was large and straight-type dislocations with high density occurred. On the other hand, the stream-type dislocations with low density were observed only in the late-growth stage. The thermal strain must have become smaller in the late-growth stage. It was found that the dislocation generation was closely related to the thermal strain at the solid-liquid interface in the crystal growth.