[20p-A406-1~13] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[20p-A406-6] Boron Doping Method using BCl₃ gas for Silicon Minimal CVD

Yuki Kamochi¹, 〇Hitoshi Habuka¹, Shin-ichi Ikeda^2,3, Yuuki Ishida^2,3, Shiro Hara^2,3 (1.Yokohama National Univ., 2.MINIMAL, 3.AIST)

Keywords:Boron doping, Minimal Fab

The boron doping in the silicon epitaxial layer for the Minimal Fab was studied. In this study, the practical concentration of 0.1 % was reported to be possible from the dichlorosilane and boron trichloride gases.