[20p-B203-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-B203-15] Comparison of β-Ga₂O₃ growth by metalorganic vapor phase epitaxy using triethylgallium and diethylgallium ethoxide

〇Ken Goto¹, Taro Nishimura¹, Haruka Tozato¹, Kazutada Ikenaga^1,2, Shogo Sasaki³, Masato Ishikawa⁴, Hideaki Machida⁴, Yoshinao Kumagai^1,3 (1.Tokyo Univ. of Agric. and Tech., 2.TAIYO NIPPON SANSO Corp., 3.TUAT FLOuRISH, 4.Gas-Phase Growth Ltd.)

Keywords:gallium oxide, MOVPE, Ga precursor