The 83rd JSAP Autumn Meeting 2022

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-B203-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Tue. Sep 20, 2022 1:00 PM - 7:00 PM B203 (B203)

Takeyoshi Onuma(Kogakuin Univ.), Hiroyuki Nishinaka(Kyoto Inst. of Tech.)

5:15 PM - 5:30 PM

[20p-B203-16] Temperature dependence of β-Ga2O3 homoepitaxial growth by MOVPE

〇Kazutada Ikenaga1,2, Taro Nishimura1, Ken Goto1, Masato Ishikawa3, Hideaki Machida3, Tomo Ueno1, Yoshinao Kumagai1 (1.Tokyo Univ. of Agric. and Tech., 2.TAIYO NIPPON SANSO Corp., 3.Gas-Phase Growth Ltd.)

Keywords:Gallium oxide, Metalorganic vapor phase epitaxy