[20p-C101-1~17] 16.3 Bulk, thin-film and other silicon-based solar cells

[20p-C101-11] Annihilation process of Ni-related levels on grain boundaries in mc-Si

〇Yuito Terada¹, Yoshifumi Yamashita¹, Hiroo Suzuki¹, Takeshi Nishikawa¹, Yasuhiko Hayashi¹ (1.Okayama Univ.)

Keywords:multicrystalline silicon for solar cell, Ni impurity, DLTS

The IT-DLTS method was used to evaluate the levels in Ni-contaminated p-type multicrystalline Si for solar cells, which disappear at room temperature when a reverse bias voltage is applied and recover when the voltage is removed and the temperature is raised to 330 K. The results were compared with the literature on single-crystalline Si, and the levels were attributed to NiH. The results were compared with the literature on single-crystalline Si, and the results indicated that this was due to NiH. In addition, isothermal annealing experiments were performed to investigate the annihilation process under reverse bias, and the activation energy was determined.