[20p-C202-1~8] 15.7 Crystal characterization, impurities and crystal defects

[20p-C202-7] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal
(21) Thermal behavior of VN complexes

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Metropolitan Univ.)

Keywords:silicon crystal, nitrogen, vacancy

We have found and identified LVM IR absorption of VNN (726, 778), VVNN (688) and VNs (685cm^-1) in electron irradiated and annealed FZ Si. We have previously observed 688 cm-1 absorption in as-grown FZ Si. It means that there is VVNN (about 1/15 of NN) in as-grown FZ Si. In 2014 we observed the increase of NN band after irradiation and annealing at 800 ℃ compared to as-grown state by about 1%. Recently it has been established that a part of grown-in VVNN disappeared by the irradiation and annealing at 800 ℃. These are interpreted as the change of a part of VVNN in as-grown Si. Therefore, VVNN starts to decompose to NN at 800 ℃.