The 83rd JSAP Autumn Meeting 2022

Presentation information

Oral presentation

13 Semiconductors » 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[20p-C401-1~16] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

Tue. Sep 20, 2022 1:30 PM - 6:00 PM C401 (C401)

Toshihiro Nakaoka(Sophia Univ.), Ryuichi Ohta(NTT), Takayuki Hasegawa(Osaka Inst. of Tech.)

1:30 PM - 1:45 PM

[20p-C401-1] Carrier relaxation dynamics in InGaN / GaN quantum dots

Kota Hasegawa1, Yuichi Nakamura1, Kazuki Kitami1, Yuya Hirano1, Atushi Takeuchi1, Shulong Lu2, Xue Zhang2, Wenxian Yang2 (1.Waseda Univ., 2.SINANO)

Keywords:InGaN quantum dots, Carrier relaxation, Tunnel time

Self-assembled quantum dots grown in Stranski-Krastanov(SK) mode are non-uniform in size, shape, and distance between dots, and have the problems of increased emission spectral width and decreased luminous efficiency. Therefore, it is important to elucidate their luminescence and carrier relaxation properties. In this experiment, we measured the photoluminescence (PL) of InGaN quantum dots in a time-resolved manner and analyzed the carrier relaxation process assuming carrier transfer due to the tunneling effect between dots.