The 83rd JSAP Autumn Meeting 2022

Presentation information

Oral presentation

13 Semiconductors » 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[20p-C401-1~16] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

Tue. Sep 20, 2022 1:30 PM - 6:00 PM C401 (C401)

Toshihiro Nakaoka(Sophia Univ.), Ryuichi Ohta(NTT), Takayuki Hasegawa(Osaka Inst. of Tech.)

1:45 PM - 2:00 PM

[20p-C401-2] The effect of tunneling on spin relaxation process in type-II tunneling bi-quantum-well

Yuichi Nakamura1, Kazuki Kitami1, Kota Hasegawa1, Yuya Hirano1, Atsushi Tackeuchi1 (1.Waseda Univ.)

Keywords:spin relaxation, tunneling effect, quantum well

The type-II GaAs/AlGaAs/AlAs tunneling bi-quantum-well (TBQ) is advantageous for the fast recovery time of excitonic absorption bleaching. In this study, we investigated the effect of barrier thickness on the tunneling effect and the spin relaxation mechanisms, especially about Bir-Aronov-Pikus process, in three GaAs/AlGaAs/AlAs type-II TBQ samples with different barrier widths by time-resolved spin-dependent pump and probe reflection measurement.