[20p-C401-1~16] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

△ [20p-C401-3] Electron spin amplification dynamics in a tunnel coupling of dilute nitride GaNAs quantum well and InAs quantum dots; effects of the position of quantum well

〇Shino Sato¹, Satoshi Hiura¹, Junichi Takayama¹, Akihiro Murayama¹ (1.IST, Hokkaido Univ.)

Keywords:quantum dot, dilute nitride semiconductor, spin dynamics

A tunnel-coupled nanostructure of dilute nitride GaNAs quantum well and InAs quantum dots can achieve the high electron spin polarization of 90% at room temperature. In this work, we have investigated the effects of the position of GaNAs quantum well on optical spin properties of InAs quantum dots at room temperature. We have prepared three types of samples, in which the GaNAs quantum well locates (1) below, (2) above and (3) both sides of quantum dots by molecular beam epitaxy. Circularly polarized time-resolved photoluminescence measurements have been carried out to discuss the electron spin amplification dynamics in these nanostructures.