[20p-C401-1~16] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[20p-C401-15] Spin-blockade at room temperature in Si tunnel FETs with the introduction of deep impurity levels

〇(PC)Yoshisuke Ban¹, Kimihiko Kato², Shota Iizuka², Shigenori Murakami², Koji Ishibashi¹, Satoshi Moriyama³, Takahiro Mori², Keiji Ono¹ (1.RIKEN, 2.AIST, 3.Tokyo Denki Univ.)

Keywords:silicon qubit, quantum sensing, spin blockade

We introduced deep impurity levels into Si devices for the high-temperature operation of Si qubit and investigated single-electron transport through the deep levels. Group II-VI impurities, S and Zn, were introduced into the Si substrate by ion implantation as deep impurities, and post-implantation annealing condition was found from the depth profiles of S and Zn measured by SIMS. The formation of deep levels in Si was confirmed by DLTS analyses. Then, we performed the process integration into Si devices under the S and Zn I/I condition found in the above experiments. To realize single-electron transport through deep impurity levels, we employed tunnel field-effect transistor (TFET) structure. As a result of the evaluation of S and Zn implanted Si TFETs, large charging energy values were observed at 10 K and 300 K. These values are 10 - 20 times higher than room temperature, suggesting high-temperature stability as a Si qubit. Furthermore, we observed clear qubit operation at 10 K, electron spin resonance up to 50 K, and spin blockades at room temperature.