[20p-C401-1~16] 13.6 ナノ構造・量子現象・ナノ量子デバイス

▲ [20p-C401-6] PL enhancement of InAs surface quantum dots by ex situ DEZ/ZnO passivation/capping

〇(D)Hanif Mohammadi¹、Ronel Roca¹、Yuwei Zhang¹、Hyunju Lee¹、Naotaka Iwata¹、Yoshio Ohshita¹、Itaru Kamiya¹ (1.Toyota tech. inst.)

キーワード：Surface quantum dot, Passivation and capping, ZnO

Molecular beam epitaxy-grown InAs surface quantum dots passivation and capping is achieved by ex situ low temperature plasma enhanced atomic layer deposition of ZnO with diethlzinc, as zinc precursor, and plasma oxygen at 200 degree Celsius.Photoluminescence enhancements up to 2-fold for surface quantum dots is related to the DEZ "self-clean-up" effect, in which during DEZ deposition surface native oxides removed and ZnO formed on the surface. For investigating the passivation mechanism, energy dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy were used. The Atomic force microscopy and scanning electron microscopy images shows the surface quantum dots shape and size preservation after capping, which resulted in suppression of the blueshift.